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| Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET FEATURES * 'Trench' technology * Very low on-state resistance * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance PHP125N06LT, PHB125N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 75 A g s RDS(ON) 8 m (VGS = 5 V) RDS(ON) 7 m (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP125N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB125N06LT is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab gate drain 1 source drain DESCRIPTION SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 55 55 13 75 75 240 250 175 UNIT V V V A A A W C March 1998 1 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PHP125N06LT, PHB125N06LT TYP. - MAX. 0.6 - UNIT K/W K/W K/W SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint 60 50 ESD LIMITING VALUE SYMBOL PARAMETER VC Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 k) MIN. MAX. 2 UNIT kV ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS V(BR)GSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; IG = 1 mA; VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VGS = 5 V; ID = 25 A VGS = 10 V; ID = 25 A Tj = 175C Forward transconductance VDS = 25 V; ID = 25 A Gate source leakage current VGS = 5 V; VDS = 0 V Tj = 175C Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance VDS = 55 V; VGS = 0 V; Tj = 175C ID = 50 A; VDD = 44 V; VGS = 5 V Tj = -55C MIN. 55 50 10 1.0 0.5 10 TYP. MAX. UNIT 1.5 6.5 4.9 45 0.02 0.05 84 18 39 45 120 225 100 3.5 4.5 7.5 5200 840 350 2.0 2.3 8 7 17 1 20 10 500 60 170 300 135 6900 1000 480 V V V V V V m m m S A A A A nC nC nC ns ns ns ns nH nH nH pF pF pF VDD = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Resistive load Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz March 1998 2 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET PHP125N06LT, PHB125N06LT REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V IF = 75 A; -dIF/dt = 100 A/s; VGS = -10 V; VR = 30 V TYP. MAX. UNIT 0.85 1.0 65 0.18 75 240 1.2 A A V V ns C AVALANCHE LIMITING VALUE SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. 500 UNIT mJ Drain-source non-repetitive ID = 75 A; VDD 25 V; VGS = 5 V; unclamped inductive turn-off RGS = 50 ; Tmb = 25 C energy 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 150 125 ID (A) Current Derating Limited by package 100 75 50 25 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb) Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 5 V March 1998 3 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET PHP125N06LT, PHB125N06LT BUKX508-55 1000 ID / A 15 RDS(ON) / mOhm VGS / V = 3 3.2 BUK9508-55 3.4 3.6 RDS(ON) = VDS/ID 100 tp = 10 us 100 us 1 ms 10 4 5 5 10 10 DC 10 ms 100 ms 0 1 1 10 VDS / V 100 0 20 40 60 ID / A 80 100 120 Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Zth / (K/W) 1E+00 Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS 100 ID/A 80 0.5 1E-01 0.2 0.1 0.05 1E-02 0.02 0 1E-03 1E-07 60 P D tp D= tp T t 40 Tj/C = 20 175 25 T 1E-05 1E-03 t/s 1E-01 1E+01 0 0 1 VGS/V 2 3 4 Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T Drain current, ID (A) 100 10 3.4 4.0 80 3.0 60 2.8 40 2.6 20 2.4 2.2 0 0 2 4 6 8 Drain-source voltage, VDS (V) 10 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj Transconductance, gfs (S) 120 VGS = 3.2 V 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 Drain current, ID (A) 80 100 Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V March 1998 4 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET PHP125N06LT, PHB125N06LT 2.5 a BUK959-60 Rds(on) normlised to 25degC 12 10 2 1.5 Thousands (pF) 8 6 Ciss 4 1 2 0.5 -100 -50 0 50 Tmb / degC 100 150 200 0 0.01 0.1 1 VDS/V 10 Coss Crss 100 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V VGS(TO) / V max. 2 typ. 1.5 BUK959-60 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 6 VGS/V 5 VDS = 14V VDS = 44V 2.5 4 3 min. 1 2 0.5 1 0 -100 -50 0 50 Tj / C 100 150 200 0 0 10 20 30 40 50 60 QG/nC 70 80 90 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Sub-Threshold Conduction Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 50 A; parameter VDS 100 IF/A 80 1E-01 1E-02 2% typ 98% 60 Tj/C = 40 175 25 1E-03 1E-04 20 1E-05 0 1E-05 0 0.2 0.4 0 0.5 1 1.5 2 2.5 3 0.6 VSDS/V 0.8 1 1.2 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj March 1998 5 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET PHP125N06LT, PHB125N06LT 120 110 100 90 80 70 60 50 40 30 20 10 0 WDSS% + L VDS VGS 0 RGS T.U.T. R 01 shunt VDD -ID/100 20 40 60 80 100 120 Tmb / C 140 160 180 Fig.15. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) March 1998 6 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET MECHANICAL DATA Dimensions in mm Net Mass: 2 g PHP125N06LT, PHB125N06LT 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.17. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". March 1998 7 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max PHP125N06LT, PHB125N06LT 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.18. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.19. SOT404 : soldering pattern for surface mounting. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8". March 1998 8 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM transistor Logic level FET DEFINITIONS Data sheet status Objective specification Product specification Limiting values PHP125N06LT, PHB125N06LT This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1998 9 Rev 1.400 |
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